unisonic technologies co., ltd qs8m11 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2014 unisonic technologies co., ltd qw-r502-b29.a dual enhancement mode (n-channel/p-channel) ? description the utc qs8m11 uses utc?s advanced technology to provide the customers with low voltage drive, etc. the utc qs8m11 is suitable for switching. ? features * n-channel: 30v, 3.5a r ds(on) < 50m ? @ v gs =10v r ds(on) < 65m ? @ v gs = 4.5v r ds(on) < 70m ? @ v gs = 4.0v * p-channel: -30v, -3.0a r ds(on) < 75m ? @ v gs = -10v r ds(on) < 115m ? @ v gs = -4.5v r ds(on) < 125m ? @ v gs = -4.0v * low voltage drive (4v drive) * low on-resistance ? symbol (2) g1 (7)(8) d1 s1 (1) s2 (3) (4) g2 (5)(6) d2 n-channel p-channel sop-8 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 4 5 6 7 8 qs8m11l-s08-t QS8M11G-S08-T sop-8 s1 g1 s2 g2 d2 d2 d1 d1 tube qs8m11l-s08-r qs8m11g-s08-r sop-8 s1 g1 s2 g2 d2 d2 d1 d1 tape reel note: pin assignment: g: gate d: drain s: source
qs8m11 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-b29.a ? marking
qs8m11 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-b29.a ? absolute maximum ratings (t a =25c, unless otherwise specified) n-channel parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current t c =25c i d 3.5 a pulsed drain current t c =25c i dm 12 a power dissipation p d 2 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c p-channel parameter symbol ratings unit drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current t c =25c i d -3.0 a pulsed drain current t c =25c i dm -12 a power dissipation p d 2 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. p w 10 s, duty cycle 1%, mounted on a ceramic board. ? electrical characteristics (t a =25c, unless otherwise specified) n-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =1ma, v gs =0v 30 v drain-source leakage current i dss v ds =30v, v gs =0v 1 a gate-source leakage current i gss v ds =0v, v gs =20v 10 ua on characteristics gate threshold voltage v gs ( th ) v ds =10v, i d =1ma 1.0 2.5 v drain-source on-state resistance (note2) r ds(on) v gs =10v, i d =3.5a 35 50 m ? v gs =4.5v, i d =3.5a 45 65 m ? v gs =4.0v, i d =3.5a 50 70 m ? dynamic characteristics input capacitance c iss v gs =0v, v ds =10v, f=1.0mhz 180 pf output capacitance c oss 70 pf reverse transfer capacitance c rss 35 pf switching characteristics turn-on delay time (note2) t d ( on ) v dd 15v, v gs =10v, i d =1.7a, r g =10 ? , r l =8.8 ? 10 ns turn-on rise time t r 25 ns turn-off delay time t d ( off ) 25 ns turn-off fall time t f 7 ns total gate charge (note2) q g v gs =5v, v dd 15v, i d =3.5a 3.5 nc gate-source charge q gs 1 nc gate-drain charge q gd 1 nc source to drain diode specifications source to drain diode voltage (note 2) v sd i s =3.5a, v gs =0v 1.2 v maximum continuous drain-source diode forward current i s 1.0 a maximum pulsed drain-source diode forward current i sm 12 a
qs8m11 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-b29.a ? electrical characteristics(cont.) p-channel parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =-1ma, v gs =0v -30 v drain-source leakage current i dss v ds =-30v, v gs =0v -1 a gate-source leakage current i gss v ds =0v, v gs =20v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =-10v, i d =-1ma -1.0 -2.5 v drain-source on-state resistance (note2) r ds(on) v gs =-10v, i d =-3.5a 55 75 m ? v gs =-4.5v, i d =-1.5a 85 115 m ? v gs =-4.0v, i d =-1.5a 95 125 m ? dynamic characteristics input capacitance c iss v gs =0v, v ds =-10v, f=1.0mhz 480 pf output capacitance c oss 70 pf reverse transfer capacitance c rss 70 pf switching characteristics turn-on delay time (note2) t d ( on ) v dd -15v, v gs =-10v, i d =-1.5a, r g =10 ? , r l =10 ? 7 ns turn-on rise time t r 18 ns turn-off delay time t d ( off ) 50 ns turn-off fall time t f 35 ns total gate charge (note2) q g v gs =-5v, v dd -15v, i d =-3a 5.2 nc gate-source charge q gs 1.6 nc gate-drain charge q gd 1.6 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd i s =-3a, v gs =0v -1.2 v continuous drain-source diode forward current i s -1.0 a pulsed drain-source diode forward current i sm -12 a notes: 1. pulse width limited by t j(max) 2. pulse width 300us, duty cycle 2%. 3. surface mounted on 1in 2 pad area, t 10 sec.
qs8m11 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw ver.a ? test circuits and waveforms n-channel
qs8m11 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw ver.a ? test circuits and waveforms(cont.) p-channel 50k ? 300nf dut v ds -10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut -3ma utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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